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| Datasheet File OCR Text: |
| CORPORATION Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier M116 FEATURES * Low IGSS * Integrated Zener Clamp for Gate Protection PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate to Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Gate Zener Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +125oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 2.2mW/ oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TO-72 C S G D 1003Z ORDERING INFORMATION Part DEVICE SCHEMATIC 1 Package Hermetic TO-72 Sorted Chips in Carriers Temperature Range -55oC to +125oC -55oC to +125oC M116 XM116 2 3 4 0330 ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified) SYMBOL rDS(on) VGS(th) BVDSS BVSDS BVGBS ID(OFF) IS(OFF) IGSS Cgs Cgd Cdb Ciss PARAMETER Drain Source ON Resistance Gate Threshold Voltage Drain-Source Breakdown Voltage Source-Drain Breakdown Voltage Gate-Body Breakdown Voltage Drain Cuttoff Current Source Cutoff Current Gate-Body Leakage Gate-Source (Note 1) Gate-Drain Capacitance (Note 1) Drain-Body Capacitance (Note 1) Input Capacitance (Note 1) 1 30 30 30 60 10 10 100 2.5 2.5 7 10 pF nA pA MIN MAX 100 200 5 V UNITS TEST CONDITIONS VGS = 20V, ID = 100A VGS = 10V, ID = 100A VGS = VDS, ID = 10A ID = 1A, VGS = 0 IS = 1A, VGD = VBD = 0 IG = 10A, VSB = VDB = 0 VDS = 20V, VGS = 0 VSD = 20V, VGD = VBD = 0 VGS = 20V, VDS = 0 VGB = VDB = VSB = 0, f = 1MHz Body Guarded VGB = 0, VDB = 10V, f = 1MHz VGB = 0, VDB = 10V, VBS = 0, f = 1MHz NOTE 1: For design reference only, not 100% tested. |
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